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| BF2030... Silicon N-Channel MOSFET Tetrode * For low noise, high gain controlled input stages up to 1GHz * Operating voltage 5V Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC GND EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type BF2030 BF2030R BF2030W Maximum Ratings Parameter Package SOT143 SOT143R SOT343 1= S 1= D 1= D 2=D 2=S 2=S Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - Marking NDs NDs ND Symbol VDS ID IG1/2SM +VG1SE Ptot Value 8 20 10 6 200 200 Unit V mA V mW Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS 76 C, BF2030, BF2030R TS 94 C, BF2030W Storage temperature Channel temperature Tstg Tch -55 ... 150 150 C 1 Apr-23-2004 BF2030... Thermal Resistance Parameter Channel - soldering point 1) BF2030/ BF2030R BF2030W Symbol Rthchs 370 280 Value Unit K/W Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 20 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol min. V(BR)DS +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) 10 6 6 0.3 0.3 Values typ. 12 0.5 0.6 max. 15 15 50 50 50 - Unit V nA A mA V 2 Apr-23-2004 BF2030... Electrical Characteristics Parameter AC Characteristics Symbol min. (verified by random sampling) gfs Cg1ss 27 31 2.4 2.8 mS pF Forward transconductance VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Power gain VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz G p 40 50 F 1.5 2.2 dB Gp 20 23 dB Cdss 1.3 Values typ. max. Unit 3 Apr-23-2004 BF2030... Total power dissipation Ptot = (TS) BF2030, BF2030R Total power dissipation Ptot = (TS) BF2030W 220 mW 220 mA 180 160 180 160 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150 P tot 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 C 150 TS TS Drain current ID = (IG1) VG2S = 4V 28 mA 24 22 20 Output characteristics ID = (V DS) VG2S = 4V VG1S = Parameter 20 mA 1.4V 16 14 1.3V ID ID 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 A 100 12 1.2V 10 8 6 4 2 0 0 1V 1.1V 0.8V 1 2 3 4 5 6 7 8 V 10 IG1 VDS 4 Apr-23-2004 BF2030... Gate 1 current IG1 = (V G1S) VDS = 5V VG2S = Parameter 210 A 180 165 150 3.5V 4V Gate 1 forward transconductance g fs = (ID) VDS = 5V, VG2S = Parameter 40 mS 4V 30 3V I G1 g fs 135 120 105 90 75 60 45 30 15 0 0 0.4 0.8 1.2 1.6 2 2.4 V 2V 2.5V 3V 25 2.5V 20 2V 15 10 5 3 0 0 4 8 12 16 20 24 mA 30 VDS ID Drain current ID = (VG1S) VDS = 5V VG2S = Parameter 30 mA 4V Drain current ID = (V GG) VDS = 5V, VG2S = 4V, RG1 = 100k (connected to VGG, V GG=gate1 supply voltage) 13 mA 11 24 22 20 3V 10 9 ID ID 2V 1.5V V 18 16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 2 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VG1S VGG 5 Apr-23-2004 BF2030... Drain current ID = (VGG) VG2S = 4V RG1 = Parameter in k 28 mA 70 Crossmodulation Vunw = (AGC) VDS = 5 V 120 dBV 24 22 20 80 110 100 120 ID 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 V V unw 105 100 95 90 85 8 80 0 10 20 30 40 dB 55 VGG=VDS AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 4n7 2.2 H 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Apr-23-2004 |
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